2. 30? 0. 05 1. 25? 0. 05 1 . 3 0 ? 0 . 0 3 0 . 3 0 2 . 0 0 ? 0 . 0 5 1 . 0 1 r e f 2SC4097 transistor(npn) features power dissipation p cm : 200 mw (tamb=25 ) collector current i cm : 500 ma collector-base voltage v (br)cbo : 40 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 100 a, i e =0 40 v collector-emitter breakdown voltage v (br)ceo ic= 1 ma, i b =0 32 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb = 20 v, i e =0 1 a emitter cut-off current i ebo v eb = 4 v, i c =0 1 a dc current gain h fe(1) v ce = 3 v, i c = 10 ma 82 390 collector-emitter saturation voltage v ce(sat) i c = 100 ma, i b = 10 ma 0.4 v transition frequency f t v ce = 5 v, i c = 20 ma, f=100mhz 250 mhz collector output capacitance c ob v cb = 10 v, i e =0, f= 1 mhz 6 pf classification of h fe(1) rank p q r range 82-180 120-270 180-390 marking cp cq cr unit: mm sot-323 1. base 2. emitter 3. collector 2SC4097 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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